• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The optoelectronic module includes one or more VCSEL transmitters and / or photodetectors arranged collinearly along a common central longitudinal axis. Light of different wavelengths may be received and transmitted by an optoelectronic module optically coupled to a single optical fiber or free space optical link. The optoelectronic module may receive two wavelengths and transmit one wavelength, or may transmit two wavelengths within an optical link. The VCSEL transmitter can be optically pumped by a vertically integrated pump VCSEL. Parallel optical links provide transmission and reception for each dual channel of a single optical fiber. The parallel optical link includes an array of optical fibers, a first array of optoelectronic modules optically coupled to the array of optical fibers to receive a laser signal having a first wavelength and a laser signal having a second wavelength, and a laser signal having a second wavelength. And a second array of optoelectronic modules optically coupled to the array of optical fibers to transmit and receive a laser signal having a first wavelength. The multi-channel data distribution system enables bidirectional distribution of data between a central distribution point and a plurality of nodes optically linked to the central distribution point.
    公开号:KR20000064552A
    申请号:KR1019980706949
    申请日:1997-11-19
    公开日:2000-11-06
    发明作者:비자이섹아르 자야라만；데이비드 제이 웰치
    申请人:캠벨 존 에스；더블유.엘. 고어 앤드 어소시에이트스, 인코포레이티드；
    IPC主号:
    专利说明:

    UCSEL multiwavelength transmitter and receiver module for serial and parallel optical links
    Typically, spatial separation of transmit and receive laser beams out of the optical fiber was required to solve the problem of transmitting and receiving signals over a single optical fiber. Conventionally, such spatial separation is realized by using a planar lightwave circuit and an edge emitting laser and waveguide detector.
    H. Okano et al., "Passive Aligned Hybrid integrated Optical Module Using Planar Lightwave Circuit Platform" from the LEOS Conference, Boston, MA, 18-21 November 1996, pp. 73-74 discloses examples of methods of using planar lightwave circuits. The method of such a planar lightwave circuit can be simplified if the transmitting and receiving laser beams can be kept on the same line. To implement this method, the wavelengths of the transmitted and received signals must be different.
    J. C. Bouley, "InP-based Photonic Integrated Circuits for future Optical Access Networks" from the LEOS Conference, Boston, MA, 18-21 November 1996, pp. 286-287, according to an example of how the laser beam remains collinear, the edge emitting laser transmits at a wavelength of 1.3 microns and the waveguide photodetector receives at a wavelength of 1.55 microns. Small tolerances for coupling edge emitters to optical fibers make it difficult to couple single mode fibers to edge emitting lasers. Edge-emitting lasers are either expensive distributed feedback lasers or etched surface lasers because the waveguide photodetector behind the laser prevents the laser from simply colliding with the cracked surface. It is difficult to control the amount of leakage from the back of the 1.3 micron edge emitter laser to the 1.55 micron photodetector. This refers to light crosstalk. Edge-lighting structures require complex changes in the lateral direction (in the plane of the wafer), making growth and processing difficult. Packages using edge emitting laser technology can be bulky and expensive.
    TECHNICAL FIELD The present invention relates to dual transmission, and in particular, to a vertical cavity surface emitting laser (VCSEL) type multi-wavelength transmitter and receiver module for serial and parallel optical links.
    1 is a schematic diagram of an optoelectronic module coupled with an optical fiber in accordance with the principles of the present invention;
    FIG. 2 is a side cross-sectional view of the optoelectronic module shown in FIG. 1. FIG.
    3 is a graph showing the reflection spectrum of the VCSEL transmitter in the optoelectronic module shown in FIG.
    4 is a schematic diagram of an optoelectronic module coupled with an optical fiber in accordance with the principles of the present invention;
    5 is a schematic diagram of a conventional multi-channel parallel optical link.
    6 is a schematic diagram of a multi-channel parallel optical link in accordance with the principles of the present invention.
    FIG. 7 is a side cross-sectional view of the optoelectronic module at the first end of the parallel optical link shown in FIG. 6.
    8 and 9 are graphs showing the reflection spectrum of the VCSEL transmitter in the optoelectronic module shown in FIG.
    10 is a side cross-sectional view of the optoelectronic module at the second end of the parallel optical link shown in FIG. 6.
    11 is a side cross-sectional view of an optoelectronic module in accordance with the principles of the invention.
    12 is a side cross-sectional view of an optoelectronic module in accordance with the principles of the invention.
    13 and 14 are schematic diagrams of a data distribution system in accordance with the principles of the present invention, respectively.
    The present invention provides a vertical cavity surface emitting laser (VCSEL) type optoelectronic module for supporting multiple wavelength transmission over a single optical fiber or free space optical link. In an embodiment, the optoelectronic module includes a VCSEL transmitter and a photodetector. The input received light and the transmitted light are different in wavelength and are coupled to / into the same optical fiber or free space optical link. In the first arrangement, the received light passes through the VCSEL before impacting the photodetector. The received wavelength is within 1450-1650 nm, for example 1550 nm, and the transmitted wavelength is within 1250-1350 nm, for example 1300 nm. The VCSEL transmitter includes an active region interposed between a pair of reflective stacks and a pair of reflective stacks. Each reflective stack is a layered system of alternating GaAs and AlGaAs (“GaAs / AlGaAs systems”) that form a distributed Bragg reflector. At least one reflective stack is wafer fused in the active region. The rate at which one reflective stack transmits transmitted light is less than 0.001%. The VCSEL transmitter can be optically pumped by the pump VCSEL and the pump laser radiation is in the range of 700-1050 nm, for example the pump VCSEL of 850 nm.
    In a second arrangement, the received input light is a shorter wavelength than the transmitted light, and the light transmitted from the VCSEL transmitter passes through the photodetector before entering the optical fiber or free space optical link. The received wavelength is in the range of 700 to 870 nm, and the transmitted wavelength is in the range of 870 to 1050 nm. The two wavelengths are combined into / from the same optical fiber or free space channel.
    In certain embodiments of the invention, a multichannel VCSEL type parallel optical link for one or more channels supports transmission and reception for each channel on a single optical fiber. This parallel optical link includes an array of optical fibers, the first array of optoelectronic transceiver modules optically coupled to the array of optical fibers to transmit a laser signal having a first wavelength and to receive a laser signal having a second wavelength, and the optoelectronic A second array of transceiver modules is optically coupled to the array of optical fibers to transmit a laser signal having a second wavelength and to receive a laser signal having a first wavelength.
    In another embodiment of the present invention, the optoelectronic module includes a vertical cavity surface emitting laser (VCSEL) transmitter, a front photodetector and a rear photodetector. The VCSEL transmitter is operative to transmit a first laser signal having a first wavelength into an optical fiber or a free space optical link. The front photodetector is operative to receive a second laser signal having a second wavelength from an optical fiber or a free space optical link. The back photodetector is operative to receive a third laser signal having a third wavelength from an optical fiber or a free space optical link. The VCSEL transmitter, the front photodetector and the rear photodetector have optical axes that are nearly collinear.
    In another embodiment of the invention, the optoelectronic module for use in the optical link comprises a front VCSEL transmitter. The front VCSEL transmitter operates to transmit a first laser signal having a first wavelength into the optical link, and is modified to pass a second laser signal having a second wavelength.
    The principles of the present invention can be implemented in a multi-channel data distribution system.
    Other features and advantages of the present invention will become apparent from the following detailed description with reference to the accompanying drawings which illustrate the features of the invention.
    The VCSEL optoelectronic module according to the principles of the present invention transmits and receives optical laser signals having different wavelengths through a single optical fiber or a free space optical link. In FIG. 1, the optoelectronic module 10 according to the principles of the present invention may be optically coupled with the optical fiber 12 and used in a free space optical link. The optoelectronic module 10 includes a VCSEL transmitter 14 and a p-i-n photodetector monolithically integrated with the VCSEL transmitter 14. The optical signal received from the optical fiber 12 passes through the VCSEL transmitter 14 before being received by the p-i-n photodetector 16 of the optoelectronic module 10.
    In FIG. 2, the VCSEL optoelectronic module includes a VCSEL transmitter 14 with an optical axis coinciding with the central longitudinal axis 20. The optical axis is the path of light propagation in the VCSEL transmitter 14. The VCSEL transmitter 14 includes a plurality of semiconductor layers, which include an upper reflective stack 22, a lower reflective stack 24, and an active region 26 interposed between the upper and lower reflective stacks. Each upper and lower reflective stack 22, 24 is made of a "GaAs / AlGaAs system". The "GaAs / AlGaAs system" is a group of materials consisting of gallium arsenide (GaAs), aluminum arsenide (AlAs) and aluminum gallium arsenide (AlGaAs). The bottom reflective stack 24 includes layers in which 50 pairs of GaAs and AlGaAs are alternately arranged, and the top reflective stack includes layers in which fewer pairs of GaAs and AlGaAs are alternately arranged. Laser radiation is emitted from the VCSEL transmitter 14 through the upper reflective stack 22 from the top surface of the VCSEL.
    The active region 26 includes a quantum wall, a barrier material separating the quantum walls, and a pair of cladding layers 28 and 30. The quantum wall is sandwiched between a pair of cladding layers 28, 30.
    The bottom reflective stack 24 is disposed on the composite semiconductor substrate 32, preferably a GaAs substrate. Upper reflective stack 22 and lower reflective stack 24 are wafer fused to the active region therebetween. Wafer fusion is handled by materials of different lattice constants being automatically bonded by supplying pressure and heat to create substantial physical bonds. Wafer fusion of the reflective stack in the active region is used to increase the reflectivity provided by the reflective stack so that the laser threshold can be reached and maintained. This results in a wafer fused interface between the top reflective stack 22 and the active region 26 and a wafer fused interface between the bottom reflective stack 24 and the active region 26.
    The long wavelength VCSEL transmitter 14 is optically pumped by a short wavelength pump VCSEL 34 integrated with the VCSEL transmitter 14. The VCSEL transmitter 14 emits coherent magneto-optical radiation having a wavelength range of 1250-1350 nm, for example 1.3 μm.
    The short wavelength pump VCSEL 34 includes a plurality of semiconductor layers and is disposed on the radiation surface of the upper reflective stack 22 about the central longitudinal axis 20. Pump VCSEL 34 is electrically supplied using two metalized contacts. The first metalized contact 36, which pumps the shortwave pump VCSEL 34, is connected to the bottom reflective stack of the pump VCSEL 34. The first metalized contact 36 is annular and located about the central longitudinal axis 20. The annular metalized contact 36 surrounds the short wavelength pump VCSEL 34 disposed in the upper reflective stack 22 of the VCSEL transmitter 14. A second metalized contact 38 that electrically pumps the short wavelength pump VCSEL 34 is disposed on the pump VCSEL 34. The second metallized contact 38 is centered about the central longitudinal axis 20. Pump VCSEL 34 is electrically pumped to emit a pumping laser beam having a wavelength range of 700 nm to 1050 nm, such as, for example, 850 nm of VCSEL transmitter 14 pumping a long wavelength VCSEL transmitter. The pump VCSEL 34 has a transmission rate of almost 100% of electromagnetic radiation having a wavelength range of 1250 nm to 1350 nm and electromagnetic radiation having a wavelength range of 1450 nm to 1650 nm. Therefore, the light signal input to the photodetector can pass through the unobstructed pump VCSEL 34 and the light signal output from the VCSEL transmitter 14 can pass through the unobstructed pump VCSEL. Long-wavelength, vertical cavitation-emitting lasers, such as vertically integrated optical pumps and methods of making them, are titled "LONG WAVELENGTH, VERTICAL CAVITY SURFACE EMITTING LASER WITH VERTICALLY INTEGRATED OPTICAL PUMP" issued to Vijaysekhar Jayaraman on April 30, 1996. In U.S. Patent 5,513,204.
    An indium phosphide (InP) substrate 42 is disposed directly below and integrated into the GaAs substrate 32. Optional absorber layer 43 may be disposed under InP substrate 42. Absorbing layer 43 absorbs backside leakage light from the VCSEL transmitter but does not absorb the received light. The purpose of the absorbing layer 43 is to detect light received from the optical fiber at the reception wavelength by absorbing light from the back side of the VCSEL transmitter and preventing reaching the photodetector under the VCSEL transmitter. The structural implementation of any absorbing layer 43 works best when the receiving wavelength is longer than the transmitting wavelength. If the transmit wavelength is 1.3 microns and the receive wavelength is 1.55 microns, the preferred absorbing layer component is indium gallium arsenide phosphide (InGaAsP) with a bandgap wavelength of 1.4 microns.
    An indium gallium arsenide (InGaAs) p-i-n photodetector 16 is disposed under the absorbing layer 43. The InGaAs p-i-n photodetector 16 is centered about the central longitudinal axis 20. The InGaAs p-i-n photodetector 16 is located on the side of the InP substrate 42 opposite the side adjacent to the GaAs substrate 32. InGaAs pin photodetectors include an n doped InP layer 46 disposed under an InP substrate 42, an undoped InGaAs layer 48 disposed under an n doped InP layer 46, and an undoped InGaAs layer 48. And a p doped InGaAs layer 50 disposed below. The undoped InGaAs layer 48 and the p doped InGaAs layer 50 exist in a mesa structure formed on the n-doped InP layer 46. The lateral linear dimension of the mesa structure measured across the central longitudinal axis 20 is about 100 μm.
    InGaAs p-i-n photodetector 16 is electrically supplied using two metalized contacts. First metallized n-type contact 52 for the p-i-n photodetector is supplied to an n-doped InP layer 46. The first metallized n-type contact 52 is annular and centered about the central longitudinal axis 20. The first metallized n-type contact 52 defines a mesa structure formed by an undoped InGaAs layer 48 and a p-doped InGaAs layer 50 disposed on the n-doped InP layer. Second metallized p-type contact 54 is disposed under p-doped InGaAs layer 50. The InGaAs p-i-n photodetector 16 is electrically supplied during operation of receiving an optical laser signal having a wavelength range of 1450-1650 nm, for example, 1.55 μm.
    The optoelectronic module shown in FIG. 2 may be used in a free space optical link or the optical fiber may be optically coupled to the optoelectronic module. The optical fiber includes a core and a cladding layer surrounding the core. The optical fiber may be a single mode optical fiber. The optical fiber 12 is coupled to the top of the short wavelength pump VCSEL 34. The VCSEL type optoelectronic module can receive an optical signal of 1.55 mu m from the optical fiber 12 or the free space optical link, and can transmit an optical signal of 1.3 mu m to the optical fiber 12 or the free space optical link. The optical fiber 12 is coupled to the pump VCSEL 34 of the optoelectronic module with an array tolerance of about 5 μm and tilted to minimize feedback.
    The present invention allows optical signals to be transmitted and received over a single optical fiber or free space optical link. Conventional approaches to solve this problem use edge emitting lasers and waveguide photodetectors. In the VCSEL type optoelectronic module according to the first embodiment of the present invention, the received signal passes through a VCSEL transmitter that emits across the photodetector behind the VCSEL transmitter for optical detection. This method is used whenever the transmitted and received optical signal is separated into a wavelength of more than half the bandwidth of the distributed Bragg reflector (DBR) in the VCSEL transmitter. In a common wavelength pair of 1.3 / 1.55 μm, in each transmitted and received optical signal, in a VCSEL transmission using a wafer fused DBR reflector made with a GaAs / AlGaAs system, this condition is easily met. This condition is satisfied with wavelength pairs of 780/980 nm and 850/980 nm in each received and transmitted optical signal. 3 is a graph showing a typical reflection spectrum of a 1.3 μm VCSEL transmitter. The graph illustrates the low reflection of the laser radiation at 1.55 μm by the 1.3 μm VCSEL transmitter. In addition, the non-absorption of laser radiation of 1.55 mu m in the 1.3 mu m VCSEL transmitter is described. If the input received optical signal is 1.55 μm and the transmitted optical signal is 1.3 μm, the DBR reflector of the 1.3 μm VCSEL transmitter will reflect less than 20% of the laser radiation of 1.55 μm. As a result, the photodetector will be at least 80% of the input laser radiation of 1.55 μm.
    If the transmission and reception wavelengths are switched so that an optical signal of 1.3 mu m is received while an optical signal of 1.55 mu m is transmitted, less than 20% of the received light is again lost by reflection. In addition, a 1.55 μm VCSEL transmitter will absorb some of the 1.3 μm input received optical signal. Absorption action occurs only on the quantum wall of the active area of the laser of 1.5 μm, and by designing the active area of the VCSEL transmitter of 1.55 μm so that it does not occur in the boundary material, cladding layer or reflective stack, the total absorption can be kept below 10% Can be. The communication result is that more than 70% of the 1.3 占 퐉 input optical signal is confirmed by the photodetector. By better system design, the absorption of the 1.3 μm optical signal by the 1.55 μm VCSEL transmitter does not adversely affect the bit error rate.
    In FIG. 2, the frequency of the lower reflective stack 24 of the VCSEL transmitter 14 (ie, the alternating layers) is such that the rear transmitter light impinging the photodetector 16 is exposed to the optical fiber 12 or free space optics. Increment until less than the expected minimum received light input from the link. The bottom reflective stack, which transmits with laser radiation at 1.3 μm, is designed to be less than 0.0001%.
    The photodetector may be placed in front of the VCSEL transmitter such that light transmitted from the VCSEL transmitter passes through the photodetector before being input into an optical fiber or a free space optical link. In this arrangement, the transmitted optical signal wavelength is longer than the received optical signal wavelength. In FIG. 4, the optoelectronic module 62 according to an embodiment of the present invention may be optically coupled with the optical fiber 64 or used in a free space optical link. The optoelectronic module 62 includes a VCSEL transmitter monolithically integrated with a p-i-n photodetector 66 and a p-i-n photodetector 66. The optical signal output from the VCSEL transmitter 68 passes through the p-i-n photodetector before being input into the optical fiber 64.
    Vertical cavity surface emitting lasers (VCSELs) can be fabricated on a wafer scale in a one-dimensional or two-dimensional array, which is a solution to parallel optical communication. In recent years, low power devices have been fabricated that have operating efficiency compared to planar edge emitting lasers. It is possible to create parallel two dimensional radiating arrays using VCSELs that generate adequate heat.
    In Fig. 5, a conventional six channel parallel optical link 76 is described. Conventional six channel parallel optical links require twelve optical fibers 78 (ie six pairs of fibers) to transmit and receive on separate optical fibers. Twelve optical fibers for six channels in a conventional arrangement are expensive using spatial separation of transmitted and received optical signals. In a conventional parallel optical link 76, an array of VCSEL transmitters and an array of photodetectors are coupled to twelve linear arrays of multimode fiber at each end of the parallel optical link. The array of VCSEL transmitters and the array of photodetectors are laterally disposed with respect to the longitudinal direction of movement of the laser radiation between the two ends of the parallel optical link 76. In this arrangement, a first array of VCSELs 80 capable of emitting laser radiation at 850 nm is laterally from a first array of photodetectors 82 that detect laser radiation at 850 nm at the first end of the optical link. Is placed. At the second end of the optical link 76, a second array of photodetectors 84 capable of receiving 850 nm laser radiation from the first array of 850 nm VCSELs is 850 nm transmitting 850 nm laser radiation. Are arranged laterally from a second array of VCSELs to a first array of 850 nm photodetectors 82.
    Half of the array of optical fibers present in the conventional arrangement shown in FIG. 5 are eliminated by the VCSEL-type multichannel parallel optical link according to the present invention, with each channel on the same optical fiber using different wavelengths for the transmitted and received optical signals. Can be sent and received for. The collinear structure allows at least one or more of the two wavelengths transmitted and received within the parallel optical link in accordance with the principles of the present invention to pass through a VCSEL transmitter or photodetector designed for a different wavelength. In accordance with the present invention, dual transmission of optical signals transmitted and received through each optical fiber uses wavelength separation of the transmitted and received optical signals rather than spatial separation in conventional practice. The pair of wavelengths is 980 nm / 780 nm but also works at 980 nm / 850 nm and with other wavelength combinations.
    In FIG. 6, a dual parallel optical link 88 in accordance with certain embodiments of the present invention includes a first end linked to a second end. The laser radiation travels between the first end and the second end in the longitudinal direction of travel. At the first end, the first array of 980 nm photodetector 90 and the first array of 780 nm VCSEL 92 are monolithically integrated and substantially collinear. That is, the first array of photodetectors and the first array of VCSELs are disposed elongated in the longitudinal direction of the movement of the laser radiation between the first and second ends of the dual optical links to couple with the optical axis of each first array of VCSEL transmitters. The optical axes of the first array of photodetectors are arranged collinearly along a common central longitudinal axis.
    The first array of VCSELs 92 at 780 nm transmits laser radiation into six broad arrays of optical fibers 94 in longitudinal movement. A first array of 980 nm photodetectors 90 passes through a first array of 780 nm VCSELs 92 and then receives laser radiation from the array of optical fibers 94.
    At the second end, the second array of 780 nm photodetector 96 and the second array of 980 nm VCSEL 98 are substantially collinear and the optical axis of the second array of photodetector 96 is a VCSEL transmitter. Are arranged collinearly along a central longitudinal axis, such as the optical axis of any of the second arrays of 98. A second array of photodetectors 96 at 780 nm receives laser radiation traveling longitudinally from the array of optical fibers 94. A second array of 980 nm VCSEL 98 transmitters transmits laser radiation to the array of optical fibers 94 in longitudinal movement in a second array of photo detectors 96 of 780 nm.
    In FIG. 7 an optoelectronic transceiver module is described at the first end of the parallel optical link for the 980 nm receive / 780 nm transmit case. The array of optoelectronic modules is coupled with the array of optical fibers. Each optoelectronic module coupled to each optical fiber includes a 780 nm VCSEL transmitter and a 980 nm photodetector monolithically integrated into the 780 nm VCSEL transmitter. The light propagation path in each device is along each optical axis. Each optical axis of the 780 nm VCSEL transmitter and the 980 nm photodetector is arranged collinearly in the longitudinal line for longitudinal movement of the laser radiation and arranged along the central longitudinal axis. Input radiation of 980 nm passes through the 780 nm transmit VCSEL of the optoelectronic module which is received by the photodetector in the optoelectronic module.
    Each 780 nm VCSEL transmitter is a top emitting VCSEL 100. Top-emitting VCSEL 100 includes a plurality of semiconductor layers formed on a composite semiconductor substrate, such as semi-insulating GaAs substrate 102. The plurality of layers includes an upper reflective stack 104, a lower reflective stack 106, and an active region 108 interposed between the upper reflective stack 104 and the lower reflective stack 106. The upper reflective stack 104 and the active region 108 are perpendicular to the lower reflective stack 106 forming a mesa structure on the lower reflective stack 106 about the longitudinal axis 110 of the center of the VCSEL transmitter and photodetector. Is etched.
    Top reflective stack 104 is p-type doping. Bottom reflective stack 106 is n-type doping. Each top and bottom reflective stack is a system of layers in which high and low refractive index materials alternate to form a distributed Bragg reflector. The alternating layers in each reflecting stack determine the reflectivity of the at least partial reflecting stack. In the 780 nm VCSEL 100 shown in FIG. 7, the multiple pairs of alternating layers in the top reflective stack 104 are fewer than the multiple pairs of alternating layers in the bottom reflective stack 106. In the top emitting VCSEL, the laser radiation is emitted vertically in a direction parallel to the central longitudinal axis 110 from the top radiation plane of the top reflective stack 104.
    The current access limiting layer 112 is disposed in the upper reflective stack 104 in a plane across the longitudinal axis 110 of the center of the VCSEL transmitter and photodetector. The current access limiting layer 112 is annular and centers around the central longitudinal axis 110. The annular current access limiting layer 112 acts as a hole to limit the current to the portion of the active region 108.
    Anti-reflective coating 114 is provided on the upper radial surface of the upper reflective stack 104. As a result, laser radiation passes from the optical fiber 116 into the VCSEL 100 without excess reflection.
    The 780 nm VCSEL 100 is electrically supplied using two metalized contacts. The first metallized p-type contact 118 is provided on the upper radial surface with the antireflective coating 114 provided on the upper reflective stack 104. The first metallized p-type contact 118 has an annular shape through which laser radiation can pass and define an opening through about a central longitudinal axis 110. Laser radiation emitted from the VCSEL 100 passes through an opening defined by an annular metalized p-type contact 118. The second metallized n-type contact 120 is provided in the lower reflective stack 106. The second metallized n-type contact portion 120 is annular and centers around the central longitudinal axis 110. Metallized n-type contact 120 describes a mesa structure formed by upper reflective stack 104 and active region 108 on lower reflective stack 106.
    There is a loss of 780 nm laser radiation from the top emitting VCSEL 100 to the semi-insulating GaAs substrate 102 under the bottom reflective stack 106. However, the backside loss of 780 nm is absorbed by the semi-insulating GaAs substrate 102.
    At the first end of the parallel optical link, an array of 980 nm photodetectors is coupled to each array of 780 nm VCSELs. Each array of photodetectors is in a longitudinal direction with one array of VCSELs, and the longitudinal axis of each center of the integrated photodetector and VCSEL is collinear and parallel to the direction of movement of laser radiation in the optical link.
    Each photodetector is a p-i-n photodetector 122. Photodetector 122 is formed under a semi-insulating synthetic semiconductor substrate, such as indium phosphide (InP) substrate 124. Semi-insulating InP substrate 124 is wafer fused to semi-insulating GaAs substrate 102. This creates a wafer fused interface 126 between the GaAs substrate 102 and the InP substrate 124. Alternatively, the GaAs substrate 102 and the InP substrate 124 may be metal bonded.
    The pin photodetector 122 includes a plurality of semiconductor layers, an n-doped InP 128 layer under a semi-insulating InP substrate 124, an i-doped InGaAs 130 under an n-doped InP 128 layer. And a p + doped InGaAs 132 layer underneath the absorber layer of InGaAs 130. The i-doped InGaAs absorbing layer 130 and the p + doped InGaAs 132 layer form a mesa structure disposed below the n-doped InP 128 layer. The side of the mesa structure portion of the p-i-n photodetector structured across the central longitudinal axis 110 is approximately 80 microns.
    The 980 nm photodetector is electrically supplied using a pair of metallized contacts. Third metallized n-type contact 134 is supplied to an n-doped InP 128 layer. The third metallized n-type contact 134 is annular and centers around the central longitudinal axis 110. Metallized n-type contact 134 describes a mesa structure formed by an i-doped layer of InGaAs absorber 130 and a p + doped InGaAs 132 layer disposed on an n-doped InP 128 layer. A fourth metallized p-type contact 136 is provided under the p + doped InGaAs 132 layer.
    The optical fiber 116 is coupled to the upper reflective stack 104. Optical fiber 116 is a multimode fiber. The lateral linear size of the optical fiber 116 measured across the central longitudinal axis 100 is generally 50 microns or 62.5 microns. Input laser radiation at 980 nm passes through the VCSEL transmitter to be received by the photodetector 122 from the optical fiber 116. Output laser radiation at 780 nm is emitted from the VCSEL transmitter 100 to the optical fiber 116.
    8 and 9 are graphs illustrating the reflection spectrum of the VCSEL transmitter at 780 nm. The reflection spectrum of the 780 nm VCSEL transmitter accounts for the minimal reflection at 980 nm. Essentially the 780 nm VCSEL transmitter 100 neither absorbs nor reflects the 980 nm input laser radiation seen in the InP / InGaAsP photodetector 122. Therefore, 980 nm light can pass through a VCSEL transmitter defined with a photodetector. 780 nm laser radiation leaking to the backside of the top emitting VCSEL 100 will be absorbed within the semi-insulating GaAs substrate 102 such that it does not reach the photodetector 122. Therefore, light crosstalk between the VCSEL and the photodetector is substantially eliminated.
    In FIG. 10, the second end of the parallel optical link for one channel is described. The optoelectronic transceiver module for each channel is coupled to one array of optical fibers. Each optoelectronic module includes a second 980 nm VCSEL 140 and a second 780 nm GaAs p-i-n photodetector 142 monolithically integrated in the second bottom emitting VCSEL 140. The second lower emission VCSEL 140 and the second p-i-n photodetector 142 have optical axes arranged to be collinear along a common central longitudinal axis 144. The p-i-n photodetector 142 is adjacent to the multi-mode fiber 146 coupled with the transceiver module in the parallel optical link. The optical fiber 146 has a lateral linear size measured across a common central longitudinal axis 144, which is generally 50 microns or 62.5 microns. Input laser radiation at 780 nm passes from the optical fiber 146 to the p-i-n photodetector 142. 980 nm output laser radiation transmitted by the VCSEL transmitter 140 passes from the p-i-n photodetector 142 to the optical fiber 146.
    The pin photodetector 142 at 780 nm includes a plurality of semiconductor layers, i-doped GaAs absorber region 150 under the p + doped GaAs 148 layer and n-doped GaAs 148 layer. GaAs 152 layer. A plurality of layers including p-i-n photodetector 142 is formed on semi-insulating GaAs substrate 154.
    VCSEL transmitter 140 is disposed under semi-insulating GaAs substrate 154. The bottom emitting VCSEL 140 includes an upper reflective stack 156, a lower reflective stack 158 and an active region 160 interposed between the upper and lower reflective stacks. Bottom reflective stack 158 of VCSEL 140 is adjacent to semi-insulating GaAs substrate 154. Top reflective stack 156 is p doped and bottom reflective stack 158 is n doped. The upper reflective stack 156 has a layer in which a greater number of pairs of high and low index materials are alternated than the bottom reflective stack 158. Top reflective stack 156 and active region 160 are etched vertically to create a mesa structure located below bottom reflective stack 158.
    A current confined region 162 forming a current hole is disposed in the upper reflective stack 156. The current confined region 162 is centered about a central longitudinal axis 144 that limits the flow of current to portions of the active region 160. The lateral linear size of the current aperture limited by the annular current limiting region 162 measured across the central longitudinal axis 144 is 10-40 microns.
    The VCSEL transmitter 140 is electrically supplied using two metalized contacts. First metallized p-type contact 164 is disposed under p-doped upper reflective stack 156. Second metallized n-type contact 166 is disposed under n-doped lower reflective stack 158. The second metallized n-type contact 166 has an annular structure about the central longitudinal axis 144 and is formed by the upper reflective stack 156 and the active region 160 disposed under the lower reflective stack 158. Limit the mesa structure formed. Laser radiation is emitted from the bottom reflective stack 158 to the semi-insulating GaAs substrate 154 in a direction parallel to the central longitudinal axis 144.
    Photodetector 142 is electrically supplied using two metalized contacts. Third metallized contacts 168 are disposed on the p + doped GaAs 148 layer. Third metallized p-type contact 168 exhibits an annular structure about a common central longitudinal axis 144. The fourth metallized n-type contact 170 has an annular structure at the center of the central longitudinal axis 144 and has a p + doped GaAs layer and i-doped GaAs absorber region disposed on the n-doped GaAs 152. Limiting the mesa structure formed by 150).
    The array of top emitting photodetectors grow epitaxially at the backside of the substrate that can be wafer fused or shared with the array of bottom emitting VCSELs. In the optoelectronic module shown in FIG. 10, a 980 nm bottom emitting VCSEL 140 emits through a GaAs p-i-n photodetector 142 grown on the bottom side radiating surface of the VCSEL wafer. Photodetector 142 absorbs 780 nm input laser radiation, but 980 nm laser radiation is not reflected and passes through 780 nm photodetector 142 to reduce the feedback of 980 nm laser radiation. The 780 nm leakage through the photodetector 142 will not be reached by the 980 nm VCSEL 140 so that the semi-insulating GaAs substrate 154 is absorbed and the operation of the 980 nm VCSEL 140 is not disturbed. The second end of the parallel optical link frees light crosstalk between the VCSEL and the photodetector.
    At both ends of the parallel optical link described by FIGS. 7 and 10, the n-type contacts of each array of VCSELs are insulated from the n-type contacts of each array of photodetectors by one or more semi-insulating substrates. This prevents electrical crosstalk between the VCSEL and the photodetector.
    In FIG. 11, an optoelectronic module usable in a free space optical link or connectable with an optical fiber includes a 1.26 μm top emitting VCSEL 174 that can be optically or electrically pumped. VCSEL 174 is fabricated on a semi-insulating GaAs 176 layer. VCSEL 174 includes an upper reflective stack 178, a lower reflective stack 180, and an active region 182 inserted between the upper and lower reflective stacks. Top reflective stack 178 and bottom reflective stack 180 are each distributed Bragg reflector fabricated from a GaAs / AlGaAs system. Both upper and lower reflective stacks are wafer fused to the active region 182.
    The upper reflective stack 178 and the active region 182 are etched perpendicular to the lower reflective stack 180 to form a mesa structure disposed on the lower reflective stack 180. If VCSEL 174 is electrically pumped, two metalized contacts may be used. First metallized p-type contact 184 is provided in top reflective stack 178. The first metallized p-type contact 184 has an annular structure. The first metallized p-type contact 184 is about a central longitudinal axis 186. The annular shape of the first metallized p-type contact 184 limits the openings through which laser radiation can pass into or out of the optical fiber 188 or free space optical link. The second metallized n-type contact 190 is provided in the lower reflective stack 180. The second metallized n-type contact 190 has an annular structure and is centered about the central longitudinal axis 186. The second metallized n-type contact 190 limits the mesa structure formed by the upper reflective stack 178 and the active region 182 disposed on the lower reflective stack 180.
    A semi-insulating InP 192 layer is disposed under the semi-insulating GaAs 176 layer. An absorbing layer 194 of InGaAsP designed to absorb 1.26 micron wavelength light leaking back from the bottom reflective stack 180 of VCSEL 174 is disposed under semi-insulating InP 192 layer.
    Front photodetector 196 is disposed under the absorbing layer of InGaAsP 194. Front photodetector 196 includes an n-doped InP contact layer 198, an undoped InGaAsP 200 layer designed to detect 1.36 μm input light, and a p-doped InAsP contact layer 202. Front photodetector 196 is electrically supplied using a pair of metalized contacts. A third metalized n-type contact 204 is provided in the n-doped InP contact layer 198. The third metalized n-type contact 204 is an annular structure around the central longitudinal axis 186 and constrains the undoped InGaAsP 200 layer. A fourth metallized p-type contact 206 is provided in the p-doped InGaAsP contact layer 202. The fourth metallized p-type contact 206 is annular and centered about the central longitudinal axis 186. An undoped InP insulating layer 208 is disposed under the p doped InGaAsP contact layer 202.
    The rear photodetector 210 is disposed below the front photodetector 196. The back photodetector 210 is monolithically integrated with the front photodetector 196 under the undoped InP insulating layer 208. Back photodetector 210 is undoped designed to detect input light of 1.55 μm under n-doped InP contact layer 212 under undoped InP insulating layer 208, n-doped InP contact layer 212. P-doped InGaAs contact layer 216 underneath the InGaAs layer 214 and the undoped InGaAs 214 layer.
    Rear photodetector 210 is electrically supplied using a pair of metalized contacts. The fifth metallized n-type contact 218 is provided in the n-doped InP contact layer 212. The fifth metallized n-type contact 218 is an annular structure about the central longitudinal axis 186 and limits the undoped InGaAs 214 layer. Sixth metallized p-type contact 220 is provided in p-doped InGaAs contact layer 216.
    The optoelectronic module shown in FIG. 11 may be operable to transmit and receive on a single optical fiber or via a free space optical link. The optoelectronic module can detect input light at wavelengths above 1.55 microns and considered 1.3 microns, 1.3 + microns. For example, the wavelength for 1.3 + microns is 1.36 microns. The optoelectronic module is transmitted between 1.3 microns, considered 1.3 + microns. For example, the wavelength for 1.3 + microns is 1.26 microns. Three wavelengths travel on the same fiber. The two input wavelengths pass through the VCSEL before emitting the photodetectors laterally.
    In FIG. 12, a dual source optoelectronic module can be used in a free space optical link or connected to a single optical fiber. The optoelectronic module can emit two laser signals having two different wavelengths within the same single optical fiber or free space optical link.
    The optoelectronic module shown in FIG. 12 includes a front VCSEL transmitter 224 and a back VCSEL transmitter 226. The front VCSEL transmitter 224 is a top emitting VCSEL. Rear VCSEL transmitter 226 is a bottom emitting VCSEL. The top emitting VCSEL 224 and the bottom emitting VCSEL 226 have optical axes arranged collinearly along the central longitudinal axis 228. The path of light propagation for each device follows the respective optical axis.
    The bottom emitting VCSEL 226 is epitaxially grown in a wafer scale manufacturing process to produce one and two dimensional arrays of devices on a semi-insulating synthetic semiconductor substrate 230, such as a GaAs substrate. The bottom emitting VCSEL 226 includes an upper reflecting stack 232, a lower reflecting stack 234, and an active region 236 inserted between the upper reflecting stack 232 and the lower reflecting stack 234. Bottom reflective stack 234 is n doped and top reflective stack 232 is p doped. Each upper and lower reflective stack is made of a GaAs / AlGaAs system.
    An annular current limiting region 238 is disposed within the upper reflective stack 232 of the plane across the common central longitudinal axis 228. Top reflective stack 232 and active region 236 are etched vertically under bottom reflective stack 234 to form a mesa structure.
    Bottom emitting VCSEL 226 is electrically pumped to emit coherent electromagnetic radiation having a wavelength substantially equal to 980 nm in semi-insulating synthetic semiconductor substrate 230 using a pair of metallized contacts. First metallized n-type contact 240 is provided in bottom reflective stack 234. The first metalized n-type contact 240 is annular and constrains the active region 236 and is centered about the central longitudinal axis 228. The second metallized p-type contact 242 is provided in the upper reflective stack 232.
    After the bottom emission VCSEL 226 is epitaxially grown on the composite semiconductor substrate 230 in a wafer scale process, the substrate 230 and the bottom emission VCSEL 226 have the top emission VCSEL 224 being the bottom emission VCSEL 226. In the backside of the substrate 230 divided by the flip-side so as to grow epitaxially in the wafer scale process.
    The top emitting VCSEL 224 includes an upper reflective stack 244, a lower reflective stack 246 and an active region 248 inserted between the upper reflective stack 244 and the lower reflective stack 246. Bottom reflective stack 246 is n doped and top reflective stack 244 is p doped. Each upper and lower reflective stack is made of a GaAs / AlGaAs system.
    The annular current limiting region 250 is disposed in the in-plane upper reflective stack 244 across the common central longitudinal axis 228. The upper reflective stack 244 is etched vertically below the lower reflective stack 246 and is all formed of a mesa structure.
    The top emitting VCSEL 224 is 700-870 nm, for example 780 nm, from within the top reflective stack 244 in a direction parallel to the central longitudinal axis 228 using a pair of metallized contacts. It is electrically pumped to emit coherent electromagnetic radiation having a wavelength range. Third metallized contacts 252 are provided in the lower reflective stack 246. The third metallized n-type contact 252 is an annular structure that limits the active region 248 so that the central longitudinal axis 228 is centered. The fourth metallized p-type contact 254 is provided in the upper reflective stack 244.
    The optoelectronic module shown in FIG. 12 may be used in a free space optical link and may be connected to an optical fiber 256, so that it may be a single mode or a multi mode fiber. The optical fiber 256 includes a core and a cladding surrounding the core. When connected, the optical fiber 256 is adjacent to the close fourth metallized p-type contact 254. The optical fiber 256 is optically coupled to receive the laser signal from the optoelectronic module. For example, top emitting VCSEL 224 and bottom emitting VCSEL 226 in the optoelectronic module transmit 780 nm laser radiation and 980 nm laser radiation to a single optical fiber 256.
    Laser radiation having a wavelength range within 870-1050 nm (eg, 980 nm) emitted by the bottom emitting VCSEL 226 passes from the top emitting VCSEL 224 to the optical fiber 256. The top emitting VCSEL 224 does not absorb 980 nm laser radiation through what is emitted by the bottom emitting VCSEL 226. The top emitting VCSEL 224 is designed to have a minimum reflectance of laser radiation of 980 nm.
    780 nm backside leakage laser radiation leaking from the bottom reflective stack 246 of the top emitting VCSEL 224 is absorbed by the semi-insulating composite semiconductor substrate 230 and does not reach the bottom emitting VCSEL 226.
    The principles of the present invention can be implemented in a multi-channel data distribution system, where the data distribution system can transmit various data between one or more central distribution points and one or more nodes coupled to each central distribution point. For example, data distribution systems include fiber-to-the-home (FTTH) systems and fiber-to-the-desk (FTTD) systems. In a home optical fiber (FTTH) system or a desktop optical fiber (FTTD) system, a central distribution point distributes information to nodes through the optical fiber.
    In FIG. 13, for example, the FTTH system 260 includes a host digital terminal (HDT) 262 and an optical network unit group (ONU) such as ONU 264 coupled to the host digital terminal (HDT), Wavelength division multiplexed optical signals may be transmitted and received between each optical network unit (ONU) 264 and a host digital terminal (HDT) 262. Each node in the FTTH system includes an ONU located in each home and the central distribution point contains an HDT that delivers to multiple homes in a particular area. Each ONU group may be a single optical fiber 266 through optical coupling with a bidirectional transmission and reception HDT, or may be a single mode or multiple modes of optical fiber. Bidirectional transmission occurs over each single fiber.
    Each network of the optical network unit ONU includes an optoelectronic module 268 that transmits and / or receives optical laser signals having different wavelength signals in the optical link. For example, the optoelectronic module 268 may be implemented as shown in FIG. 2 or FIG. 11. The optical link is through an optical fiber. In the example shown in FIG. 13, the optoelectronic module 268 of the ONU operates to transmit and / or receive wavelength division multiplexed (WDM) optical laser signals having different wavelengths into and out of a single optical fiber 266. do. The ONU 264 shown in FIG. 13 includes logic electronics 270 that can generate and process signals to control the bidirectional WDM optoelectronic module 268. Programmable network interface card (NIC) 272 in each ONU 264 configures and changes the ONU in accordance with system operating requirements.
    In the first embodiment, the optical network unit (ONU) 264 in each home transmits information to the HDT 262 of the laser signal having the first wavelength and from the HDT 262 of the laser signal having the second wavelength. Receive information. The HDT 262 is operated to transmit data on the ONU 264 of the laser signal having the second wavelength and to receive data from the ONU 264 of the laser signal having the first wavelength. The first wavelength is 1.3 mu m and the second wavelength is 1.55 mu m.
    In a second embodiment, the optical network unit (ONU) 264 in each home transmits information to the HDT 262 of the transmitted laser signal having the first wavelength and has two having a second and a third wavelength, respectively. Information is received from the HDT 262 of the received laser signal. HDT 262 transmits information to ONU 264 of two laser signals having a second and third wavelength, respectively, and receives information from ONU 264 of a laser signal having a first wavelength. The first wavelength transmitted from the home ONU 264 to the optical link is 1.3 μm, the second wavelength transmitted from the HDT 262 to the home ONU 264 is 1.55 μm, and the home ONU from the HDT 262 is The third wavelength sent to 264 is 1.3 + mu m.
    In FIG. 14, an exemplary FTTD system 276 includes a central distribution point 278 that is linked to one or more networks 280 of office nodes in a building (building group), so that data is distributed to the central distribution point 278 and office nodes. It can be distributed bi-directionally between the network of 280. The central distribution point 278 in the building includes a hub 282 with a switching function. One or more networks of each office node are linked to hubs in the building. Each office node in the network includes a desk-top box 284 placed on a desk. The media 286 linking the nodes in each network 280 and the network linked to the hub 282 are optical fibers. Hub 282 operates to switch communications to and from the node's linked network. Network interface cards are used in each desk-top box and hubs in the network to establish protocols for communication and route signals between linked networks.
    Each network 280 of the desk-top box 284 placed on a desk may transmit a laser signal having a first wavelength to a hub 282 located about the laser signal having a first wavelength, and transmitting a laser signal having a second wavelength to the hub 282. Can be received from. The hub 282 may transmit a laser signal having a second wavelength to each desk-top box 284 and receive a laser signal having a first wavelength from each desk-top box 284.
    In an embodiment, the first wavelength is in the wavelength range of 870-1050 nm, such as, for example, 980 nm. The second wavelength is in the range of 700-870 nm, for example, 780 nm.
    While some specific forms of the invention have been shown and described, it will be understood that various modifications and changes can be made without departing from the spirit and scope of the invention.
    权利要求:
    Claims (66)
    [1" claim-type="Currently amended] In the optoelectronic module for an optical link,
    A front vertical cavity surface emitting laser (VCSEL) transmitter having a plurality of semiconductor layers and operative to transmit a transmitted laser signal having a first wavelength into an optical link,
    And a second laser signal having a second wavelength is routed through the plurality of layers in the front VCSEL transmitter.
    [2" claim-type="Currently amended] The optoelectronic module of claim 1 further comprising a backside laser operative to transmit the second laser signal into the optical link.
    [3" claim-type="Currently amended] The optoelectronic module of claim 2 wherein the back side laser is a VCSEL.
    [4" claim-type="Currently amended] The optoelectronic module of claim 1 further comprising a photodetector operative to receive the second laser signal from an optical link.
    [5" claim-type="Currently amended] 4. The optoelectronic module of claim 3, wherein the back side laser is monolithically integrated with the front side VCSEL transmitter.
    [6" claim-type="Currently amended] 5. The optoelectronic module of claim 4, wherein the photodetector is monolithically integrated with the front side VCSEL transmitter.
    [7" claim-type="Currently amended] 4. The optoelectronic module of claim 3, wherein the optical axes of the front VCSEL transmitter and the back laser are substantially collinear.
    [8" claim-type="Currently amended] 5. The optoelectronic module of claim 4, wherein the optical axes of the front VCSEL transmitter and the photodetector are substantially collinear.
    [9" claim-type="Currently amended] In a method of routing an optical signal in an optical link,
    (A) transmitting a transmission laser signal having a first wavelength from the optoelectronic module comprising a composite layer front vertical cavity surface emitting laser (VCSEL) transmitter into the interior of the optical link,
    (B) passing a second laser signal having a second wavelength through one or more layers of the composite layer front side VCSEL transmitter.
    [10" claim-type="Currently amended] 10. The method of claim 9, further comprising transmitting the second laser signal to an optical link.
    [11" claim-type="Currently amended] 10. The method of claim 9, further comprising receiving the second laser signal from an optical link.
    [12" claim-type="Currently amended] 10. The method of claim 9, wherein the optoelectronic module further comprises a back side laser operative to transmit the second laser signal.
    [13" claim-type="Currently amended] 13. The method of claim 12 wherein the back side laser is a VCSEL.
    [14" claim-type="Currently amended] 10. The method of claim 9, wherein the optoelectronic module further comprises a photodetector operative to receive the second laser signal.
    [15" claim-type="Currently amended] 15. The method of claim 13, further comprising monolithically integrating said backside laser with said front side VCSEL transmitter.
    [16" claim-type="Currently amended] 15. The method of claim 14, further comprising monolithically integrating the photodetector with the front side VCSEL transmitter.
    [17" claim-type="Currently amended] 15. The method of claim 13, further comprising arranging each optical axis of the front VCSEL transmitter and the back laser collinearly along a common central longitudinal axis.
    [18" claim-type="Currently amended] 15. The method of claim 14, further comprising arranging each optical axis of the front VCSEL transmitter and the photodetector collinearly along a common central longitudinal axis.
    [19" claim-type="Currently amended] In the optoelectronic module for an optical link,
    A vertical cavity surface emitting laser (VCSEL) transmitter operative to transmit a transmitted laser signal having a first wavelength to an optical link,
    A photodetector operative to receive from the optical link a received laser signal having a second wavelength;
    And the optical axes of the VCSEL transmitter and the photodetector are substantially collinear.
    [20" claim-type="Currently amended] 20. The optoelectronic module of claim 19, wherein the first wavelength is in the wavelength range of 1250-1350 nm and the second wavelength is in the wavelength range of 1450-1650 nm.
    [21" claim-type="Currently amended] 20. The optoelectronic module according to claim 19, wherein the first wavelength is in the range of 700 to 870 nm, and the second wavelength is in the range of 870 to 1050 nm.
    [22" claim-type="Currently amended] 20. The optoelectronic module of claim 19, wherein the first wavelength is in the range of 1450 nm to 1650 nm and the second wavelength is in the range of 1250 nm to 1350 nm.
    [23" claim-type="Currently amended] 20. The optoelectronic module according to claim 19, wherein the first wavelength is in the wavelength range of 870 to 1050 nm, and the second wavelength is in the wavelength range of 700 to 870 nm.
    [24" claim-type="Currently amended] 20. The apparatus of claim 19, wherein the VCSEL transmitter comprises: a pair of reflective stacks;
    An active region interposed between the pair of reflective stacks;
    And a wafer fused interface between one of the pair of reflective stacks and the active region.
    [25" claim-type="Currently amended] 25. The optoelectronic module of claim 24, wherein each of the pair of reflective stacks is a system of layers in which GaAs and AlGaAs alternate to form a distributed Bragg reflector.
    [26" claim-type="Currently amended] 20. The apparatus of claim 19, wherein the VCSEL transmitter comprises a pair of reflective stacks, wherein one of the pair of reflective stacks has a transmission rate less than 0.0001 percent for electromagnetic radiation having the first wavelength. Optoelectronic module.
    [27" claim-type="Currently amended] 20. The optoelectronic module of claim 19, wherein the VCSEL transmitter comprises an absorbing layer adapted to absorb electromagnetic radiation having a pair of reflective stacks and a first wavelength.
    [28" claim-type="Currently amended] 20. The apparatus of claim 19, wherein the VCSEL transmitter comprises: a long wavelength VCSEL emitting laser radiation at a first wavelength;
    An electrically pumped short wavelength VCSEL integrated with the long wavelength VCSEL emitting laser radiation at the pumping wavelength,
    Wherein said short wavelength VCSEL is operative to pump said long wavelength VCSEL arbitrarily.
    [29" claim-type="Currently amended] 29. The optoelectronic module of claim 28, wherein the pumping wavelength is in the range of 700 to 1050 nm.
    [30" claim-type="Currently amended] 20. The optoelectronic module of claim 19, further comprising an optical fiber coupled to the VCSEL transmitter.
    [31" claim-type="Currently amended] 31. The optoelectronic module of claim 30, wherein the optical fiber is a single mode fiber.
    [32" claim-type="Currently amended] 20. The method of claim 19, wherein the second wavelength is less than the first wavelength,
    And said transmitted laser signal passes through a photodetector before being input into an optical link.
    [33" claim-type="Currently amended] 33. The optoelectronic module of claim 32, further comprising an optical fiber coupled to the photodetector.
    [34" claim-type="Currently amended] 33. The optoelectronic module of claim 32, wherein the first wavelength is in the wavelength range of 870 to 1050 nm and the second wavelength is in the wavelength range of 700 to 870 nm.
    [35" claim-type="Currently amended] In one or more dual channel parallel optical links,
    An array of optical fibers;
    Optically coupled to an array of optical fibers, each including a photodetector having an optical axis that is substantially collinear with a vertical cavity emitting laser (VCSEL), transmitting a laser signal having a first wavelength and receiving a laser signal having a second wavelength A first array of optoelectronic modules;
    A second array of optoelectronic modules each including a photodetector having an optical axis that is substantially collinear with the VCSEL and optically coupled to the array of optical fibers to transmit a laser signal having a second wavelength and to receive a laser signal having a first wavelength Parallel optical link comprising a.
    [36" claim-type="Currently amended] 36. The system of claim 35, wherein the first array of optoelectronic modules comprises: a first array of top emitting VCSELs for transmitting a laser signal having a first wavelength to an array of optical fibers;
    A first array of underlying photodetectors for receiving a laser signal having a second wavelength from an array of optical fibers,
    Each of the first arrays of top emitting VCSELs is collinear with one of the first arrays of bottom illumination photodetectors along a common central longitudinal axis,
    The laser signal having a second wavelength is passed through the first array of VCSELs before being received by the first array of photodetectors.
    [37" claim-type="Currently amended] 37. The parallel optical link of claim 36, wherein the first array of top emitting VCSELs and the first array of bottom illumination photodetectors are monolithically integrated.
    [38" claim-type="Currently amended] 36. The system of claim 35, wherein the second array of optoelectronic modules comprises: a second array of top-illuminated photodetectors to receive a laser signal having the first wavelength from the array of optical fibers;
    A second array of bottom emitting VCSELs to transmit a laser signal having the second wavelength to the array of optical fibers,
    Each of the second arrays of top-illuminated photodetectors is collinear with one of the second arrays of bottom-emitting VCSELs along a common central longitudinal axis,
    And said laser signal having a second wavelength is passed through said second array of photodetectors before being input into said array of optical fibers.
    [39" claim-type="Currently amended] 39. The parallel optical link of claim 38 wherein the second array of top illumination photodetectors and the second array of bottom emission VCSELs are monolithically integrated.
    [40" claim-type="Currently amended] 36. The parallel optical link of claim 35, wherein the first wavelength is in the range of 700 to 870 nm and the second wavelength is in the range of 870 to 1050 nm.
    [41" claim-type="Currently amended] 37. The parallel optical link of claim 36, wherein the first array of bottom illuminated photodetectors is wafer fused to the first array of top emitting VCSELs.
    [42" claim-type="Currently amended] 37. The parallel optical link of claim 36, wherein the first array of bottom illuminated photodetectors is metal coupled to the first array of top emitting VCSELs.
    [43" claim-type="Currently amended] 39. The parallel optical link of claim 38 wherein the second array of top illumination photodetectors grows on the backside of a substrate sharing with the second array of bottom emitting VCSELs.
    [44" claim-type="Currently amended] 39. The parallel optical link of claim 38 wherein the second array of top illumination photodetectors is wafer fused to a second array of bottom emitting VCSELs.
    [45" claim-type="Currently amended] 36. The parallel optical link of claim 35, wherein the first wavelength is in the wavelength range of 1250-1350 nm and the second wavelength is in the wavelength range of 1500-1600 nm.
    [46" claim-type="Currently amended] 36. The parallel optical link of claim 35, wherein each array of optical fibers is a multimode optical fiber.
    [47" claim-type="Currently amended] 36. The parallel optical link of claim 35, wherein each array of optical fibers is a single mode optical fiber.
    [48" claim-type="Currently amended] 37. The device of claim 36, further comprising: an upper n-type contact electrically pumping the first array of top emitting VCSELs;
    A bottom n-type contact electrically supplying a first array of bottom illumination photodetectors;
    And at least one semi-insulating substrate layer electrically insulating the lower n-type contact from the upper n-type contact.
    [49" claim-type="Currently amended] 39. The device of claim 38, further comprising: an upper n-type contact electrically supplying a second array of upper illumination photodetectors;
    A bottom n-type contact electrically pumping a second array of bottom emitting VCSELs;
    And at least one semi-insulating substrate layer electrically insulating the upper n-type contact from the lower n-type contact.
    [50" claim-type="Currently amended] In the optoelectronic module for an optical link,
    A vertical cavity surface emitting laser (VCSEL) transmitter operative to transmit a first laser signal having a first wavelength to an optical fiber,
    A front photodetector operable to receive from the optical fiber a second laser signal having a second wavelength;
    A backside photodetector operable to receive a third laser signal having a third wavelength from said optical fiber,
    And said VCSEL transmitter, said front photodetector and said back photodetector have optical axes that are substantially collinear.
    [51" claim-type="Currently amended] 51. The optoelectronic module of claim 50, wherein the first wavelength is in a wavelength range of 1.25 to 1.31 microns, the second wavelength is in a wavelength range of 1.31 to 1.36 microns, and the third wavelength is equal to 1.55 microns.
    [52" claim-type="Currently amended] 51. The optoelectronic module of claim 50, wherein the front photodetector and the back photodetector are monolithically integrated on an InP substrate.
    [53" claim-type="Currently amended] 51. The apparatus of claim 50, wherein the VCSEL transmitter comprises a pair of reflective stacks,
    An active region interposed between the pair of reflective stacks,
    And said pair of reflective stacks are wafer fused to said active region.
    [54" claim-type="Currently amended] 51. The optoelectronic module of claim 50, wherein the VCSEL transmitter is electrically pumped to generate the first laser signal.
    [55" claim-type="Currently amended] A host digital terminal that distributes data to multiple homes within a particular area,
    An optical network unit connected to the host digital terminal by an optical fiber in one or more homes,
    The optical network unit comprises the optoelectronic module according to claim 20.
    [56" claim-type="Currently amended] A host digital terminal that distributes data to multiple homes within a particular area,
    An optical network unit connected to the host digital terminal by an optical fiber in one or more homes,
    The optical network unit comprises the optoelectronic module according to claim 50.
    [57" claim-type="Currently amended] A host digital terminal that distributes data to multiple homes within a particular area,
    An optical network unit connected to the host digital terminal by an optical fiber in one or more homes,
    The optical network unit comprises the optoelectronic module according to claim 22.
    [58" claim-type="Currently amended] A host digital terminal that distributes data to multiple homes within a particular area,
    An optical network unit connected to the host digital terminal by an optical fiber in one or more homes,
    The host digital terminal comprises the optoelectronic module according to claim 22.
    [59" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    A desktop optical fiber system according to claim 34, wherein the optoelectronic module according to claim 34 is connected to said central distribution point by optical fibers in at least one office.
    [60" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    A plurality of optoelectronic modules connected to said central distribution point by an optical fiber,
    And said central distribution point comprises the optoelectronic module of claim 21.
    [61" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    A tabletop optical fiber system comprising the optoelectronic module according to claim 22 connected to said central distribution point by an optical fiber in one or more offices.
    [62" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    A plurality of optoelectronic modules connected to said central distribution point by an optical fiber,
    And said central distribution point comprises the optoelectronic module as defined in claim 20.
    [63" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    A plurality of optoelectronic modules connected to said central distribution point by an optical fiber,
    And said central distribution point comprises the optoelectronic module as defined in claim 22.
    [64" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    A plurality of optoelectronic modules connected to said central distribution point by an optical fiber,
    And said central distribution point comprises the optoelectronic module of claim 34.
    [65" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    A tabletop optical fiber system comprising the optoelectronic module according to claim 21 connected to said central distribution point by optical fibers in at least one office.
    [66" claim-type="Currently amended] A central distribution point for distributing data to multiple offices,
    21. A tabletop optical fiber system comprising the optoelectronic module according to claim 20 connected to said central distribution point by an optical fiber in at least one office.
    类似技术:
    公开号 | 公开日 | 专利标题
    US10243322B2|2019-03-26|Surface coupled systems
    US9429725B2|2016-08-30|Bidirectional parallel optical transceiver module and a method for bidirectionally communicating optical signals over an optical link
    US8577191B2|2013-11-05|Low-cost transceiver approach
    US8995493B2|2015-03-31|Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
    US8767792B2|2014-07-01|Method for electrically pumped semiconductor evanescent laser
    US8604577B2|2013-12-10|Hybrid silicon vertical cavity laser with in-plane coupling
    Song et al.2016|3D integrated hybrid silicon laser
    US20170207600A1|2017-07-20|3d photonic integration with light coupling elements
    Michalzik2013|VCSEL fundamentals
    US7627018B1|2009-12-01|Polarization control using diffraction gratings in VCSEL waveguide grating couplers
    AU2006285426B2|2012-07-26|Optical phase conjugation laser diode
    US7787511B2|2010-08-31|Array of surface-emitting laser diodes having reduced device resistance and capable of performing high output operation and method of fabricating the surface-emitting laser diode
    US6253004B1|2001-06-26|Optical interconnection structure for enlarging alignment tolerance
    DE69927447T2|2006-07-13|Device with an optical function and special connection electrodes
    JP3067880B2|2000-07-24|Photodetector having diffraction grating
    US5940564A|1999-08-17|Device for coupling a light source or receiver to an optical waveguide
    US8737845B2|2014-05-27|Optical engine for point-to-point communications
    US7288421B2|2007-10-30|Method for forming an optoelectronic device having an isolation layer
    US6148016A|2000-11-14|Integrated semiconductor lasers and photodetectors
    US6424669B1|2002-07-23|Integrated optically pumped vertical cavity surface emitting laser
    US6829286B1|2004-12-07|Resonant cavity enhanced VCSEL/waveguide grating coupler
    DE4422209C2|2003-01-02|Optical messaging network
    JP4237828B2|2009-03-11|Resonant reflector with improved optoelectronic device performance and increased availability
    KR100229051B1|1999-11-01|Long wavelength vertical cavity surface emitting laser with vertically integrated optical pump
    US5031188A|1991-07-09|Inline diplex lightwave transceiver
    同族专利:
    公开号 | 公开日
    JP2000507399A|2000-06-13|
    AU5687098A|1998-08-03|
    EP0886895A1|1998-12-30|
    US5914976A|1999-06-22|
    WO1998031080A1|1998-07-16|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-01-08|Priority to US08/780,767
    1997-01-08|Priority to US8/780,767
    1997-11-19|Application filed by 캠벨 존 에스, 더블유.엘. 고어 앤드 어소시에이트스, 인코포레이티드
    1997-11-19|Priority to PCT/US1997/021386
    2000-11-06|Publication of KR20000064552A
    优先权:
    申请号 | 申请日 | 专利标题
    US08/780,767|US5914976A|1997-01-08|1997-01-08|VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links|
    US8/780,767|1997-01-08|
    PCT/US1997/021386|WO1998031080A1|1997-01-08|1997-11-19|Vcsel-based multi-wavelength transmitter and receiver modules for serial and parallel optical links|
    [返回顶部]